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The measured essentiality of electron effective mass on electron transport behavior and optical band gap in Ga-doped ZnO thin films

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Abstract

The electron effective mass (\( m_{\text{e}}^{*} \)) of Ga-doped ZnO (GZO) thin films is determined using electrical and spectroscopic ellipsometry measurements. The effects of different \( m_{\text{e}}^{*} \) used in the literature on electrical transport behavior and optical band gap shift are comparatively investigated to analyze the error qualitatively. The self-contradictory results of electrical transport behavior and the small deviation of optical band gap shift from the fixed \( m_{\text{e}}^{*} \) indicate that the accurate \( m_{\text{e}}^{*} \) has a more significant influence on the analysis of electrical transport behavior than the optical band gap shift. These results can be extended to other materials and provide a guideline to make the relevant analysis more accurate.

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Acknowledgements

This work was supported by The National Key Specialty Construction Project of Clinical Pharmacy (Grant No. 30305030698).

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Authors and Affiliations

  1. School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, 611731, People’s Republic of China

    Chenlei Jing & Wu Tang

  2. Personalized Drug Therapy Key Laboratory of Sichuan Province, Department of Pharmacy, Sichuan Academy of Medical Sciences and Sichuan Provincial People’s Hospital, Chengdu, 610072, People’s Republic of China

    Jianyou Shi

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  1. Chenlei Jing
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Correspondence to Jianyou Shi or Wu Tang.

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Jing, C., Shi, J. & Tang, W. The measured essentiality of electron effective mass on electron transport behavior and optical band gap in Ga-doped ZnO thin films. J Mater Sci 54, 12659–12667 (2019). https://doi.org/10.1007/s10853-019-03775-3

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  • DOI: https://doi.org/10.1007/s10853-019-03775-3

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