Abstract
The silicon-on-insulator diaphragm structure is a combined structure of the silicon dioxide and silicon layer. This work presents a new method to estimate the deflection response of silicon with that of a silicon-on-insulator (SOI) diaphragm structure, based on the burst pressure design approach. It also evaluates the output voltage of the diaphragm under two different conditions, flipped and un-flipped. The new modified analytical model developed and presented in this paper for describing the load deflection of SOI diaphragm is able to predict the deflection accurately when compared with the results obtained by finite element analysis CoventorWare®.
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Y. Zhang, C. Yang, Z. Zhang, H. Lin, L. Liu, and T. Ren, “A novel pressure micro sensor with 30-μm-thick diaphragm and meander-shaped piezoresistors partially distributed on high-stress bulk silicon region,” IEEE Sensors Journal, 2007, 7(12): 1742–1748.
L. Lin and W. Yun, “MEMS pressure sensors for aerospace applications,” IEEE Aerospace Conference, 1998, 1: 429–436.
B. Folkmer, P. Steiner, and W. Lang, “A pressure sensor based on a nitride membrane using single-crystalline piezoresistors,” Sensors and Actuators A: Physical, 1996, 54(1–3): 488–492.
A. Berns, U. Buder, E. Obermeier, A. Wolter, and A. Leder, “Aero MEMS sensor array for high-resolution wall pressure measurements,” Sensors and Actuators A: Physical, 2006, 132(1): 104–111.
A. Wisitsoraat, V. Patthanasetakul, T. Lomas, and A. Tuantranont, “Low cost, thin film based piezoresistive MEMS tactile sensor,” Sensors and Actuators A: Physical, 2007, 139(1–2): 17–22.
R. E. Oosterbroek, T. S. J. Lammerink, J. W. Berenschot, G. J. M. Krijnen, M. C. Elwenspoek, and A. V. D. Berg, “A micromachined pressure/flow-sensor,” Sensors and Actuators A: Physical, 1999, 77(3): 167–177.
P. D. Dimitropoulos, C. Kachris, D. P. Karampatzakisa, and G. I. Stamoulis, “A new SOI monolithic capacitive sensor for absolute and differential pressure measurements,” Sensors and Actuators A: Physical, 2005, 123–124: 36–43.
L, Chen and M. Mehregany, “A silicon carbide capacitive pressure sensor for in-cylinder pressure measurement,” Sensors and Actuators A: Physical, 2008, 145–146: 2–8.
K. J. Suja, B. P. Chaudhary, and R. Komaragiri, “Design and simulation of pressure sensor for ocean depth measurement,” Applied Mechanics and Materials, 2013, 313–314: 666–670.
Y. Kanda and A. Yasukawa, “Optimum design considerations for silicon piezoresistive pressure sensors,” Sensors and Actuators A: Physical, 1997, 62(1–3): 539–542.
K. Sakurano, H. Katoh, Y. Chun, and H. Watanabe, “Operation of a work function type SOI temperature sensor up to 250AC,” in IEEE International SOI Conference Proceedings 2007, Osaka, Japan, pp. 149–150, 2007.
R. Sathishkumar, A. Vimalajuliet, J. S. Prasath, K. Selvakumar, and S. V. Reddy, “Micro size ultrasonic transducer for marine applications,” Indian Journal of Science and Technology, 2011, 4(1): 8–11.
I. Obieta, E. Castano, and F. J. Gracia, “High temperature polysilicon pressure microsensor,” Sensors and Actuators A: Physical, 1995, 46(1–3): 161–165.
S. Aravamudhan and S. Bhansali, “Reinforced piezoresistive pressure sensor for ocean depth measurements,” Sensors and Actuators A: Physical, 2008, 142(1): 111–117.
M. Narayanaswamy, R. J. Daniel, K. Sumangala, and C. A. Jeyasehar, “Computer aided modelling and diaphragm design approach for high sensitivity silicon-on-insulator pressure sensor,” Measurement, 2011, 44(10): 1924–1936.
L. Zhao, C. Xu, and G. Shen, “Analysis for load limitation of square-shaped silicon diaphragms,” Solid-State Electronics, 2006, 50(9–10): 1579–1583.
S. Timoshenko and S. Woinowsky-Krieger, Theory of Plates and Shells. New York: McGraw-Hill, 1959: 16–20.
Sreenath L.S, Advanced Solid Mechanics. New York: Tata MC Graw-Hill Education, 2001.
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Suja, K.J., Komaragiri, R. Computer aided modeling for a miniature silicon-on-insulator MEMS piezoresistive pressure sensor. Photonic Sens 5, 202–210 (2015). https://doi.org/10.1007/s13320-015-0239-y
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DOI: https://doi.org/10.1007/s13320-015-0239-y