Pt and W ohmic contacts to p-6H-SiC by focused ion beam direct-write deposition A. A. IliadisS. N. AndronescuK. A. Jones Special Issue Paper Pages: 136 - 140
Temperature measurement in a silicon carbide light emitting diode by raman scattering H. HarimaT. HosodaS. Nakashima Special Issue Paper Pages: 141 - 143
Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SiC P. J. MacfarlaneM. E. Zvanut Special Issue Paper Pages: 144 - 147
Circular and linear enhancement-mode 6H-SiC MOSFETs for high temperature applications U. SchmidS. T. SheppardW. Wondrak Special Issue Paper Pages: 148 - 153
Experimental characterization and numerical simulation of the electrical properties of nitrogen, aluminum, and boron in 4H/6H-SiC W. KaindlM. LadesG. Wachutka Special Issue Paper Pages: 154 - 160
Re-oxidation characteristics of oxynitrides on 3C- and 4H-SiC K. ChattyV. KhemkaR. J. Gutmann Special Issue Paper Pages: 161 - 166
Characterization of phosphorus implantation in 4H-SiC V. KhemkaR. PatelJ. Kretchmer Special Issue Paper Pages: 167 - 174
Improvements of the SiC homoepitaxy process in a horizontal cold-wall CVD reactor F. WischmeyerE. NiemannH. L. Hartnagel Special Issue Paper Pages: 175 - 179
Electron microscopic study on residual defects of Al+ or B+ implanted 4H-SiC T. OhnoH. OnoseT. Yatsuo Special Issue Paper Pages: 180 - 185
Correlation of the electrical properties with interface crystallography in the Ti/3C-SiC system Ferid TouatiTakemasa KiminoriManabu Saji Special Issue Paper Pages: 186 - 189
Shallow acceptor levels in 4H- and 6H-SiC S. R. SmithA. O. EvwarayeM. A. Capano Special Issue Paper Pages: 190 - 195
Plasma chemistries for high density plasma etching of SiC J. HongR. J. ShulM. Östling Special Issue Paper Pages: 196 - 201
Hydrogen sensing characteristics of Pd-SiC schottky diode operating at high temperature C. K. KimJ. H. LeeW. P. Kang Special Issue Paper Pages: 202 - 205
Mechanisms of homo- and heteroepitaxial growth of SiC on α-SiC(0001) by solid-source molecular beam epitaxy A. FisselK. PfennighausW. Richter Special Issue Paper Pages: 206 - 213
Surface roughening in ion implanted 4H-silicon carbide M. A. CapanoS. RyuD. E. Walker Jr. Special Issue Paper Pages: 214 - 218
Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor Frédéric LanoisDominique PlansonJean-Pierre Chante Special Issue Paper Pages: 219 - 224
Structural and electrical characterization of AIN thin films obtained by nitridation of Al/Si substrate Jipo HuangLianwei WangMikael Östling Special Issue Paper Pages: 225 - 227
Electrical characteristics and thermal stability of W, WSiN, and Nb contacts to p- and n-type GaN Kenji ShiojimaDavid T. McInturffRuss D. Dupuis Special Issue Paper Pages: 228 - 233
Interfacial effects during GaN growth on 6H-SiC J. T. TorvikM. W. LeksonoC. Magee Special Issue Paper Pages: 234 - 239
Visible-blindness in photoconductive and photovoltaic AlGaN ultraviolet detectors E. MonroyF. CalleP. Gibart Special Issue Paper Pages: 240 - 245
Photoluminescence characteristics and pit formation of InGaN/GaN quantum-well structures grown on sapphire substrates by low-pressure metalorganic vapor phase epitaxy Kenji UchidaMasahiko KawataJun Gotoh Special Issue Paper Pages: 246 - 251
Magnetic resonance studies of InGaN-based quantum well diodes W. E. CarlosE. R. GlaserShuji Nakamura Special Issue Paper Pages: 252 - 256
Wet thermal oxidation of GaN E. D. ReadingerS. D. WolterR. J. Molnar Special Issue Paper Pages: 257 - 260
Redistribution of implanted dopants in GaN X. A. CaoR. G. WilsonJ. M. Zavada Special Issue Paper Pages: 261 - 265
Annealing studies of photoluminescence spectra from multiple Er3+ centers in er-implanted GaN S. KimS. J. RheeS. G. Bishop Special Issue Paper Pages: 266 - 274
Pulsed laser deposition and processing of wide band gap semiconductors and related materials R. D. VisputeS. ChoopunK. A. Jones Special Issue Paper Pages: 275 - 286
Room-temperature continuous-wave operation of GaN-based laser diodes grown by raised-pressure metalorganic chemical vapor deposition Katsunori YanashimaShigeki HashimotoMasao Ikeda Special Issue Paper Pages: 287 - 289
UV-photoassisted etching of GaN in KOH Hyun ChoK. H. AuhS. J. Pearton Special Issue Paper Pages: 290 - 294
Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride M. A. L. JohnsonZhonghai YuJ. F. Schetzina Special Issue Paper Pages: 295 - 300
The impact of nitridation and nucleation layer process conditions on morphology and electron transport in GaN epitaxial films A. E. WickendenD. D. KoleskeM. E. Twigg Special Issue Paper Pages: 301 - 307
Electronic near-surface defect states of bare and metal covered n-GaN films observed by cathodoluminescence spectroscopy A. P. YoungJ. SchäferJ. F. Schetzina Special Issue Paper Pages: 308 - 313
Plasma etch-induced conduction changes in gallium nitride C. R. Eddy Jr.B. Molnar Special Issue Paper Pages: 314 - 318
Activation of silicon ion-implanted gallium nitride by furnace annealing R. D. DupuisC. J. EitingM. Feng Special Issue Paper Pages: 319 - 324
Very high-speed ultraviolet photodetectors fabricated on GaN J. C. CarranoT. LiJ. C. Campbell Special Issue Paper Pages: 325 - 333
Donor ion-implantation doping into SiC Mulpuri V. RaoJ. TuckerM. Ghezzo Special Issue Paper Pages: 334 - 340
Effects of annealing in an oxygen ambient on electrical properties of ohmic contacts to p-type GaN Yasuo KoideT. MaedaMasanori Murakami Special Issue Paper Pages: 341 - 346
